Microstructural Investigation of Ni/Au Ohmic Contact on p-Type GaN
نویسندگان
چکیده
منابع مشابه
High-transparency Ni/Au ohmic contact to p-type GaN
In this study, a very thin Ni/Au bilayer metal film was prepared by electron beam evaporation and thermal alloying to form ohmic contact on p-type GaN film. After thermal alloying, the current– voltage (I – V) characteristic of Ni/Au contact on p-type GaN film exhibited ohmic behavior. The Ni/Au contacts showed a specific contact resistance of 1.7310 V cm at an alloying temperature of 450 °C. I...
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The effect of nanoscale Pt islands on the electrical characteristics of contacts to p-type gallium nitride (GaN) has been investigated to explore the feasibility for the flip-chip configuration light-emitting diodes (LEDs) using an Al-based reflector. An as-deposited Al contact to p-GaN with a net hole concentration of 3 × 10 cm−3 was rectifying. However, an Al contact with nanoscale Pt islands...
متن کاملA Thermodynamic Approach to Ohmic Contact Formation to p-GaN
A new ohmic contact scheme for gallium nitride is presented. The use of Nitrideforming metal Over Gallide-forming metal, “NOG”, can modify the thermodynamic activity of N and Ga near the interface. This in turn can modify the near-surface point defect concentrations, particularly the vacancies of Ga and N. The principle of this contact scheme was shown to be consistent with results from Ni/Au, ...
متن کاملElectrical, thermal, and microstructural characteristics of TiÕAlÕTiÕAu multilayer Ohmic contacts to n-type GaN
The electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au ~30 nm/100 nm/30 nm/30 nm! multilayer Ohmic contacts to n-GaN ~doping level 5310 cm) were studied. The lowest contact resistivity derived from the annealed contact was rS53.0310 V cm. The contacts were robust and showed high-thermal stability. X-ray diffraction and Auger electron spectroscopy studies were made to invest...
متن کاملCharacterization of Pd/Ni/Au ohmic contacts on p-GaN
A low-resistance ohmic contact to Mg-doped p-type GaN grown by metal-organic chemical vapor deposition (MOCVD) with a carrier concentration of 2 · 10 cm 3 using Pd/Ni/Au metallization was formed. An anneal at 500 C for 1 min in a flowing N2 ambient produced an excellent ohmic contact with a specific contact resistivity as low as 2.4 · 10 5 X cm. X-ray photoelectron spectroscopy (XPS) and Auger ...
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ژورنال
عنوان ژورنال: Journal of The Electrochemical Society
سال: 2000
ISSN: 0013-4651
DOI: 10.1149/1.1394117